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IBM sub-1nm chip technology (nanostack)

by IBM

IBM Research's 0.7 nm (7 angstrom) chip technology using a 3D "nanostack" transistor architecture, announced June 2026.

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IBM sub-1nm chip technology (nanostack) at a glance

What is IBM sub-1nm chip technology (nanostack)?
IBM sub-1nm chip technology (nanostack) is a hardware from IBM. IBM Research's 0.7 nm (7 angstrom) chip technology using a 3D "nanostack" transistor architecture, announced June 2026.
Who makes IBM sub-1nm chip technology (nanostack)?
IBM sub-1nm chip technology (nanostack) is made by IBM.
Does IBM sub-1nm chip technology (nanostack) work in the EU?
Unverified. No explicit evidence found. This is a research-stage chip technology with no commercial availability or regional offering yet. Last verified 14 Nov 2026.
How much does IBM sub-1nm chip technology (nanostack) cost?
Pricing unknown. Research demonstration; not commercially available. Licence: Proprietary.
Where was IBM sub-1nm chip technology (nanostack) shown?
In 1 creator video by AI Search. Most recently by AI Search on 28 Jun 2026, at 11:35 in “GPT 5.6, Mythos ban lifted, realtime avatars, Seedance 2.5, brain ultrasound: AI NEWS”.

Sources: the vendor's own pages (linked above) and creator videos at the linked timestamps. EU status is information, not legal advice; see how we check.

About

IBM's sub-1 nm chip technology is a semiconductor research result announced on 25 June 2026 at the 0.7 nm (7 angstrom) node. It is built on "nanostack", which IBM describes as the industry's first known three-dimensional, nanosheet-based transistor design. Nanostack vertically stacks and staggers transistors using 3D sequential integration and allows different material combinations in each stacked layer.

IBM says the chip packs nearly 100 billion transistors onto a fingernail-sized die, nearly twice the density of its 2 nm chip unveiled in 2021. Published technical results project up to 50% more performance or 70% greater energy efficiency compared with IBM's 2 nm node chips. Research presented at VLSI 2026 reported 40% scaling in SRAM. Experimental validation covered ultra-thin dielectric bonding in CMOS integration, dual-channel engineering and a functional CMOS inverter. The performance figures are projections.

This is a research demonstration, not a purchasable product. IBM says it sees a path to production as early as the next 5 years. The work is done with partners at the Albany, New York research facility, including Lam Research, Tokyo Electron and SCREEN, on High NA EUV processes using ASML tooling. IBM notes that node names refer to a manufacturing generation rather than an exact physical dimension.

Key features
  • 0.7 nm (7 angstrom) node logic technology
  • 3D nanostack architecture with vertically stacked and staggered transistors
  • Nearly 100 billion transistors on a fingernail-sized chip
  • Projected up to 50% more performance or 70% better energy efficiency than 2 nm
  • 40% SRAM scaling reported at VLSI 2026
  • Production path projected within about 5 years
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